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SI2334DS-T1-GE3 - Vishay

Description: MOSFET N-CH 30V 4.9A SOT-23

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SI2334DS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2334DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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3D Models
SI2334DS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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SI2334DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2334DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.9 A

  • Drain-source On Resistance-Max:

    0.044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2334DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2334DS-T1-GE3 is a 4-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
  • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Use a solder with a melting point of 217°C to 220°C, and avoid applying excessive solder or heat to prevent damage to the device.
  • The maximum operating temperature range for the SI2334DS-T1-GE3 is -40°C to 125°C, with a storage temperature range of -55°C to 150°C.
  • To prevent electrostatic discharge (ESD) damage, handle the SI2334DS-T1-GE3 with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed internal components.
  • The recommended input voltage range for the SI2334DS-T1-GE3 is 2.5 V to 5.5 V, with a maximum input voltage of 6.5 V for a short duration (less than 100 ms).

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SI2334DS-T1-GE3 Overview

Use the download button to access the SI2334DS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
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