Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SI2336DS-T1-GE3 - Vishay

Description: VISHAY - SI2336DS-T1-GE3 - MOSFET,N CH,30V,5.2A,DIODE,SOT23

Download SI2336DS-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SI2336DS-T1-GE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SI2336DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom
3D Models
SI2336DS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom

SI2336DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2336DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.2 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.8 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2336DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2336DS-T1-GE3 is a 3x3mm QFN package with a 0.5mm pitch. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 125°C). Additionally, provide adequate thermal management, such as heat sinks or thermal pads, to prevent overheating.
  • The maximum allowable voltage on the input pins of the SI2336DS-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • To prevent ESD damage, handle the SI2336DS-T1-GE3 with ESD-protective equipment, such as wrist straps or anti-static bags. Ensure that the device is stored in a conductive bag or container when not in use.
  • The recommended soldering profile for the SI2336DS-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2336DS-T1-GE3 Overview

Use the download button to access the SI2336DS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI233, or try a keyword search, such as Small Signal Field-Effect Transistors

Suggested Parts

If you searched for SI2336DS-T1-GE3, you might also be interested in these parts:
Part Number
DMP2035U-7
TLV341IDBVR
TLV342AIDR
SI2343CDS-T1-GE3
DMG1012UW-7
LP2950CZ-3.3/NOPB
W3102
C0603C104K4RACTU
CR0603-FX-4872ELF

Parts related to SI2336DS-T1-GE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SI2336DS-T1-GE3 Alternates

Showing results

Image Part Number Model
Part Image SI2336DS-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2334DS-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236