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SI2342DS-T1-GE3 - Vishay

Description: VISHAY - SI2342DS-T1-GE3 - MOSFET, N-CH, 8V, 6A, SOT-23

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PCB Footprints
SI2342DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - TO-236
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SI2342DS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - TO-236
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SI2342DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2342DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    200 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2342DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SI2342DS-T1-GE3 is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V for a logic-level input, or 10V for a standard input.
  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate trace as short as possible to minimize ringing and oscillations.
  • Yes, the SI2342DS-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz, but be aware of the potential for increased power losses and consider using a gate driver to minimize switching times.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to prevent overcurrent conditions.

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SI2342DS-T1-GE3 Overview

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