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SI2351DS-T1-E3 - Vishay

Description: MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3

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PCB Footprints
SI2351DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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3D Models
SI2351DS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
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SI2351DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2351DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TO-236, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2351DS-T1-E3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the PCB layer stack-up symmetrical and using a thermal interface material (TIM) can help improve thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The recommended soldering conditions for the SI2351DS-T1-E3 are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It's also recommended to use a solder with a melting point above 217°C and to follow the IPC-J-STD-020 standard for soldering.
  • To handle ESD protection during handling and assembly, it's recommended to use an ESD wrist strap or mat, handle the devices by the body or leads, avoid touching the pins, and use ESD-protected packaging and storage materials. Additionally, consider implementing an ESD protection circuit in the design to protect the device from electrostatic discharge.
  • When using the SI2351DS-T1-E3 in a high-reliability or safety-critical application, it's essential to consider the device's failure modes, fault tolerance, and redundancy. Additionally, ensure that the device is properly derated, and that the design meets the required safety standards and regulations. It's also recommended to consult with a reliability engineer and to perform thorough testing and validation.

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SI2351DS-T1-E3 Overview

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Part Image SI2351DS-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB