SI2356DS-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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Part Number SI2356DS-T1-GE3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category SOT23 (3-Pin)
Footprint Name SOT23 (3-Pin) - -SOT-23
Released Date Jul 10, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI2356DS-T1-GE3 Details

Manufacturer Part Number:
SI2356DS-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-236, SOT-23, 3 PIN
Country Of Origin:
Germany
ECCN Code:
EAR99
Factory Lead Time:
19 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
7
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
4.3 A
Drain-source On Resistance-Max:
0.051 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
17 pF
JEDEC-95 Code:
TO-236AB
JESD-30 Code:
R-PDSO-G3
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
1.7 W
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SI2356DS-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI2356DS-T1-GE3 is a standard SO-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-10365.
To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure good airflow around the device.
The maximum allowed voltage on the enable pin (EN) of the SI2356DS-T1-GE3 is 6V. Exceeding this voltage may damage the device.
Yes, the SI2356DS-T1-GE3 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's specifications.
The SI2356DS-T1-GE3 requires a specific power sequencing to ensure proper operation. It is recommended to power up the VIN pin before the VCC pin, and power down the VCC pin before the VIN pin.

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SI2356DS-T1-GE3 - Vishay

SI2356DS-T1-GE3 Details

SI2356DS-T1-GE3 Frequently Asked Questions (FAQs)

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SI2356DS-T1-GE3 Overview

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