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SI2365EDS-T1-BE3 - Vishay

Description: MOSFETs SOT23 P CHAN 20V

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PCB Footprints
SI2365EDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_2025-2
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3D Models
SI2365EDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_2025-2
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SI2365EDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2365EDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5.9 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2365EDS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2365EDS-T1-BE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed power dissipation for the SI2365EDS-T1-BE3 is dependent on the ambient temperature and the thermal resistance of the device. Refer to the datasheet for the power dissipation curves and thermal resistance values to determine the maximum allowed power dissipation for your specific application.
  • Yes, the SI2365EDS-T1-BE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses and electromagnetic interference (EMI).
  • To protect the SI2365EDS-T1-BE3 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags or tubes, and ensure that the device is properly grounded during handling and assembly. Additionally, consider implementing ESD protection circuits in your design.

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SI2365EDS-T1-BE3 Overview

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