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SI2367DS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 20-V (D-S)

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PCB Footprints
SI2367DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2367DS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2367DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2367DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.8 A

  • Drain-source On Resistance-Max:

    0.066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    89 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2367DS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2367DS-T1-BE3 is a 4-pad QFN package with a 2x2 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions, derate the power dissipation according to the thermal derating curve, and ensure proper thermal management, such as using a heat sink or thermal interface material.
  • The maximum allowed voltage on the enable pin (EN) of the SI2367DS-T1-BE3 is 6 V. Exceeding this voltage may damage the device.
  • Yes, the SI2367DS-T1-BE3 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • To troubleshoot issues with the SI2367DS-T1-BE3, follow a systematic approach: 1) Verify the power supply voltage and current, 2) Check the input and output voltage levels, 3) Verify the enable pin (EN) voltage, 4) Check for thermal issues, and 5) Consult the datasheet and application notes for guidance.

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SI2367DS-T1-BE3 Overview

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