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SI2371EDS-T1-GE3 - Vishay

Description: MOSFET -30V Vds 12V Vgs SOT-23

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Symbol
SI2371EDS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2371EDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2371EDS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2371EDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2371EDS-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2371EDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2371EDS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI2371EDS-T1-GE3 is capable of delivering up to 1A of continuous output current. However, it's recommended to derate the output current to 0.8A for optimal reliability and thermal performance.
  • To ensure reliable operation, it's essential to provide adequate thermal management for the SI2371EDS-T1-GE3. A thermal pad on the PCB, connected to a copper plane or a heat sink, can help dissipate heat. Additionally, ensure good airflow around the device and avoid blocking airflow with nearby components.
  • The SI2371EDS-T1-GE3 has built-in ESD protection up to 2kV (Human Body Model) and 100V (Machine Model). It also features latch-up immunity to ensure reliable operation in harsh environments.

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SI2371EDS-T1-GE3 Overview

Use the download button to access the SI2371EDS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI237, or try a keyword search, such as Small Signal Field-Effect Transistors

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