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SI2399DS-T1-GE3 - Vishay

Description: P-Channel 20-V (D-S) MOSFET

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SI2399DS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2399DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2399DS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2399DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2399DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    155 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2399DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2399DS-T1-GE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for each pin.
  • To ensure the SI2399DS-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 2.7V to 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum power dissipation for the SI2399DS-T1-GE3 is 350mW. However, this value may vary depending on the operating conditions and PCB design. It's essential to perform thermal analysis to ensure the device operates within its specified power dissipation limits.
  • Yes, the SI2399DS-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is suitable for use in harsh environments.
  • Handle the SI2399DS-T1-GE3 with care during storage and shipping to prevent damage. Store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. Avoid bending, flexing, or applying excessive force to the leads.

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SI2399DS-T1-GE3 Overview

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