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SI3127DV-T1-GE3 - Vishay

Description: MOSFET -60V Vds 20V Vgs TSOP-6

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PCB Footprints
SI3127DV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - MO-193C
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3D Models
SI3127DV-T1-GE3 - Vishay  - 3D model - SOT23 (6-Pin) - MO-193C
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SI3127DV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3127DV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.1 A

  • Drain-source On Resistance-Max:

    0.089 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3127DV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3127DV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5 V and 5.5 V, and the VOUT pin to a load impedance of at least 1 kΩ. Also, ensure the EN pin is tied to a logic high (VIN) to enable the device.
  • The SI3127DV-T1-GE3 is rated for operation from -40°C to 125°C (junction temperature). However, the device can be operated up to 150°C with derating.
  • To prevent ESD damage, handle the SI3127DV-T1-GE3 with an ESD wrist strap or mat, and ensure the device is stored in an anti-static bag or tube. Avoid touching the device's pins or leads.
  • Yes, the SI3127DV-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions and design guidelines to ensure optimal performance and reliability.

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SI3127DV-T1-GE3 Overview

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