SI3410DV-T1-GE3 - Vishay

SI3410DV-T1-GE3 Details

• Manufacturer Part Number:

  SI3410DV-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  MO-193C, TSOP-6

• Country Of Origin:

  Germany

• ECCN Code:

  EAR99

• Factory Lead Time:

  19 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  7

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  8 A

• Drain-source On Resistance-Max:

  0.0195 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  MO-193AA

• JESD-30 Code:

  R-PDSO-G6

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  4.1 W

• Pulsed Drain Current-Max (IDM):

  30 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON