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SI3417DV-T1-GE3 - Vishay

Description: MOSFET -30V Vds 20V Vgs TSOP-6

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Symbol
SI3417DV-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI3417DV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - 6-LEAD TSOP
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3D Models
SI3417DV-T1-GE3 - Vishay - 3D model - SOT23 (6-Pin) - 6-LEAD TSOP
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SI3417DV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3417DV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0252 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3417DV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3417DV-T1-GE3 is a standard QFN16 package with a 3x3mm body size and 0.5mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note AN81142. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
  • The SI3417DV-T1-GE3 is rated for operation from -40°C to 125°C. However, it's essential to consider the derating curves and thermal management guidelines in the datasheet to ensure reliable operation within the specified temperature range.
  • Yes, the SI3417DV-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 qualification standard and is manufactured in accordance with IATF 16949 quality management system standards.
  • To prevent electrostatic discharge (ESD) damage, handle the SI3417DV-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Follow proper ESD handling procedures, and ensure the device is stored in a protective package when not in use.

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SI3417DV-T1-GE3 Overview

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