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SI3421DV-T1-GE3 - Vishay

Description: VISHAY - SI3421DV-T1-GE3 - MOSFET, P CHANNEL, -30V, -8A, TSOP-6

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PCB Footprints
SI3421DV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6LEAD
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3D Models
SI3421DV-T1-GE3 - Vishay  - 3D model - SOT23 (6-Pin) - TSOP 6LEAD
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SI3421DV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3421DV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0192 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3421DV-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay provides a recommended PCB layout and land pattern in their application notes and design guides. It's essential to follow these guidelines to ensure optimal performance, minimize thermal resistance, and reduce electromagnetic interference (EMI).
  • To ensure the device operates within the SOA, calculate the maximum allowable voltage, current, and power dissipation based on the application's requirements. Monitor the device's junction temperature, and implement thermal management techniques, such as heat sinks or thermal interfaces, to prevent overheating.
  • The SI3421DV-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Follow standard ESD precautions, such as using wrist straps, anti-static bags, and ESD-safe workstations, to prevent damage.
  • The SI3421DV-T1-GE3 is a commercial-grade device, but Vishay offers other variants with enhanced reliability and automotive-grade options. Consult with Vishay's technical support or review their product portfolio to find a suitable device for high-reliability or automotive applications.
  • The SI3421DV-T1-GE3 has a high power density, so thermal management is crucial. Implement heat sinks, thermal interfaces, or other cooling solutions to maintain a safe junction temperature. Ensure good thermal conductivity between the device and the heat sink, and consider using thermal simulation tools to optimize the design.

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SI3421DV-T1-GE3 Overview

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