Part Image

SI3433CDV-T1-E3 - Vishay

Description: MOSFET -20V Vds 8V Vgs TSOP-6

Download SI3433CDV-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI3433CDV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
click to zoom
3D Models
SI3433CDV-T1-E3 - Vishay  - 3D model - Small Outline Packages - TSOP 6 LEAD
click to zoom

SI3433CDV-T1-E3 Details

  • Manufacturer Part Number:

    SI3433CDV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5.2 A

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    180 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3433CDV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3433CDV-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the VOUT pin to a capacitor with a value between 1uF and 10uF. The EN pin should be tied to VIN or a logic signal for enable/disable functionality.
  • The SI3433CDV-T1-E3 has an operating temperature range of -40°C to 125°C. However, it's recommended to operate within -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI3433CDV-T1-E3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and PCB design guidelines to ensure optimal performance and reliability.
  • To troubleshoot issues with the SI3433CDV-T1-E3, check the input voltage, output capacitor value, and PCB layout for any noise or interference. Verify that the device is properly biased and the EN pin is correctly configured. If issues persist, consult the datasheet or contact Vishay Intertechnologies' technical support for further assistance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI3433CDV-T1-E3 Overview

Use the download button to access the SI3433CDV-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI343, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI3433CDV-T1-E3

Showing 0 results

SI3433CDV-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI3433CDV-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA