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SI3442BDV-T1-E3 - Vishay

Description: SI3442BDV-T1-E3, N-channel MOSFET Transistor 3 A 20 V, 6-Pin TSOP

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SI3442BDV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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SI3442BDV-T1-E3 - Vishay  - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3442BDV-T1-E3 Details

  • Manufacturer Part Number:

    SI3442BDV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI3442BDV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3442BDV-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 1.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure the SI3442BDV-T1-E3 operates within its recommended operating conditions, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, ensure proper thermal management and PCB design to prevent overheating.
  • The maximum allowed voltage on the input pins of the SI3442BDV-T1-E3 is 5.5V. Exceeding this voltage may damage the device.
  • The SI3442BDV-T1-E3 is rated for operation up to 150°C. However, it's essential to follow the recommended derating guidelines for temperature and power dissipation to ensure reliable operation.
  • To troubleshoot issues with the SI3442BDV-T1-E3, start by verifying the device is properly soldered and powered. Check the input and output signals, and ensure the device is operated within its recommended conditions. Consult the datasheet and application notes for guidance on troubleshooting common issues.

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SI3442BDV-T1-E3 Overview

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Part Image SI3442BDV-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

Part Image SI3442BDV-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA