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SI3457BDV-T1-E3 - Vishay

Description: SI3457BDV-T1-E3, P-channel MOSFET Transistor 3.7 A 30 V, 6-Pin TSOP

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SI3457BDV-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI3457BDV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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SI3457BDV-T1-E3 - Vishay - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3457BDV-T1-E3 Details

  • Manufacturer Part Number:

    SI3457BDV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI3457BDV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI3457BDV-T1-E3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for QFN and DFN Packages' (document number 28353).
  • The thermal pad on the bottom of the SI3457BDV-T1-E3 should be connected to a solid ground plane on the PCB to ensure optimal thermal performance. A thermal via or a thermal pad on the PCB is recommended to dissipate heat efficiently.
  • The maximum operating temperature range for the SI3457BDV-T1-E3 is -40°C to 125°C. However, it's essential to note that the device's performance may degrade at extreme temperatures, and the user should consult the datasheet for specific temperature-related specifications.
  • Yes, the SI3457BDV-T1-E3 is qualified for automotive and high-reliability applications. However, it's crucial to consult with Vishay Intertechnologies' sales team or application engineers to ensure the device meets the specific requirements of your application.
  • For troubleshooting issues with the SI3457BDV-T1-E3, it's recommended to consult the device's datasheet, application notes, and evaluation boards. Additionally, Vishay Intertechnologies' technical support team can provide guidance and support to resolve any issues.

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SI3457BDV-T1-E3 Overview

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Power Field-Effect Transistor, 3.7A I(D), 30V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET