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SI3457CDV-T1-BE3 - Vishay

Description: P-Channel 30 V 4.1A (Ta), 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

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SI3457CDV-T1-BE3 Details

  • Manufacturer Part Number:

    SI3457CDV-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.1 A

  • Drain-source On Resistance-Max:

    0.074 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3457CDV-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI3457CDV-T1-BE3 can be found in the Vishay Intertechnologies' application note AN81193, which provides a detailed guide for PCB layout and land pattern design.
  • To ensure reliability in high-temperature applications, it's essential to follow the recommended derating guidelines provided in the datasheet. Additionally, consider using thermal management techniques, such as heat sinks or thermal interfaces, to reduce the junction temperature.
  • The maximum allowable power dissipation for the SI3457CDV-T1-BE3 is dependent on the ambient temperature and the thermal resistance of the device. Refer to the datasheet for the power dissipation curves and thermal resistance values to determine the maximum allowable power dissipation for your specific application.
  • Yes, the SI3457CDV-T1-BE3 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses.
  • To protect the SI3457CDV-T1-BE3 from ESD, follow proper handling and storage procedures, such as using anti-static bags or containers, and grounding yourself before handling the device. Additionally, consider implementing ESD protection circuits in your design.

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SI3457CDV-T1-BE3 Overview

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