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SI3459BDV-T1-E3 - Vishay

Description: MOSFET 60V 2.9A 3.3W 216mohm @ 10V

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SI3459BDV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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SI3459BDV-T1-E3 - Vishay  - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3459BDV-T1-E3 Details

  • Manufacturer Part Number:

    SI3459BDV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.0022 A

  • Drain-source On Resistance-Max:

    0.216 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3459BDV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3459BDV-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI3459BDV-T1-E3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not subjected to excessive power dissipation. Monitor the junction temperature and ensure it remains below the maximum rated temperature of 150°C.
  • A recommended thermal management strategy for the SI3459BDV-T1-E3 is to use a thermal pad on the PCB, ensure good airflow, and consider using a heat sink if the device is expected to operate at high temperatures or high power levels.
  • To handle ESD protection when handling the SI3459BDV-T1-E3, use an ESD wrist strap or mat, handle the device by the body or pins, avoid touching the pins or die, and store the device in an anti-static bag or container.
  • Store the SI3459BDV-T1-E3 in a dry, cool place, away from direct sunlight and moisture. Handle the device with care, avoiding bending or flexing the leads, and avoid exposing it to mechanical stress or vibration.

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SI3459BDV-T1-E3 Overview

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