Part Image

SI3469DV-T1-E3 - Vishay

Description: MOSFET 20V 6.7A 0.03Ohm P-Channel 20-V (D-S) MOSFET

Download SI3469DV-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI3469DV-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6LEAD
click to zoom
3D Models
SI3469DV-T1-E3 - Vishay  - 3D model - SOT23 (6-Pin) - TSOP 6LEAD
click to zoom

SI3469DV-T1-E3 Details

  • Manufacturer Part Number:

    SI3469DV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.14 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3469DV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3469DV-T1-E3 is a 3x3mm QFN package with a 0.5mm pitch. A minimum of 2mm clearance around the device is recommended for thermal and electrical considerations.
  • To ensure the SI3469DV-T1-E3 operates within its recommended operating conditions, maintain a junction temperature (TJ) below 150°C, and provide a stable input voltage within the recommended range of 2.5V to 5.5V. Additionally, ensure the device is operated within the recommended current limits and thermal design power (TDP).
  • The maximum allowable power dissipation for the SI3469DV-T1-E3 is 1.4W. However, this value may vary depending on the specific application and operating conditions. It is essential to perform thermal analysis and design considerations to ensure the device operates within its recommended thermal limits.
  • Yes, the SI3469DV-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade devices and is suitable for use in harsh environments. However, it is essential to consult with Vishay Intertechnologies for specific application requirements and to ensure compliance with relevant industry standards.
  • To prevent damage and ensure the reliability of the SI3469DV-T1-E3, store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. Handle the devices by the body, avoiding contact with the pins or electrical connections.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI3469DV-T1-E3 Overview

Use the download button to access the SI3469DV-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI346, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI3469DV-T1-E3

Showing 0 results

SI3469DV-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI3445DV Rochester Electronics LLC

5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6

Part Image SI3445DVD87Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.5A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET

Part Image FDC604P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI3469DV-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

Part Image FDC602P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for SI3469DV-T1-E3, check out Findchips.com