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SI3483CDV-T1-GE3 - Vishay

Description: MOSFETs -30V Vds 20V Vgs TSOP-6

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SI3483CDV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3483CDV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.1 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    4.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3483CDV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3483CDV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1 μF and a maximum equivalent series resistance (ESR) of 1 Ω. Additionally, the input capacitance should be at least 1 μF with an ESR of 0.1 Ω or less.
  • The maximum ambient temperature range for the SI3483CDV-T1-GE3 is -40°C to 125°C. However, the device can operate up to 150°C with derating.
  • Yes, the SI3483CDV-T1-GE3 is suitable for high-reliability applications. It is manufactured using a proprietary process that ensures high reliability and is qualified to automotive and industrial standards.
  • The power dissipation of the SI3483CDV-T1-GE3 can be calculated using the formula: Pd = (Vin - Vout) x Iout. Where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

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SI3483CDV-T1-GE3 Overview

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Part Image SI3483CDV-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 6.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA