Part Image

SI3483DDV-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 30-V (D-S)

Download SI3483DDV-T1-BE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI3483DDV-T1-BE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SI3460DDV-T1-BE3
click to zoom
3D Models
SI3483DDV-T1-BE3 - Vishay  - 3D model - SOT23 (6-Pin) - SI3460DDV-T1-BE3
click to zoom

SI3483DDV-T1-BE3 Details

  • Manufacturer Part Number:

    SI3483DDV-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0312 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3483DDV-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3483DDV-T1-BE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the device operates within the recommended operating conditions, ensure the input voltage is within the specified range (4.5 V to 18 V), the ambient temperature is within the specified range (-40°C to 150°C), and the device is properly cooled.
  • The maximum allowed power dissipation for the SI3483DDV-T1-BE3 is 1.4 W at an ambient temperature of 25°C, and it decreases as the ambient temperature increases.
  • The junction temperature of the SI3483DDV-T1-BE3 can be calculated using the formula: Tj = Ta + (PD x θJA), where Ta is the ambient temperature, PD is the power dissipation, and θJA is the junction-to-ambient thermal resistance (125°C/W).
  • The recommended storage condition for the SI3483DDV-T1-BE3 is in a dry, cool place with a temperature range of -40°C to 30°C and humidity below 60%.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI3483DDV-T1-BE3 Overview

Use the download button to access the SI3483DDV-T1-BE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI348, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI3483DDV-T1-BE3

Showing 0 results