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SI3483DDV-T1-GE3 - Vishay

Description: VISHAY - SI3483DDV-T1-GE3 - Power MOSFET, P Channel, 30 V, 8 A, 0.026 ohm, TSOP, Surface Mount

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Symbol
SI3483DDV-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI3483DDV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6LEAD
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3D Models
SI3483DDV-T1-GE3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP 6LEAD
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SI3483DDV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3483DDV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-05-16

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0312 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3483DDV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3483DDV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI3483DDV-T1-GE3 operates within its SOA, ensure the maximum voltage and current ratings are not exceeded, and the device is operated within the recommended temperature range of -40°C to 150°C.
  • The thermal resistance of the SI3483DDV-T1-GE3 is typically 125°C/W for junction-to-ambient (RθJA) and 25°C/W for junction-to-case (RθJC).
  • Yes, the SI3483DDV-T1-GE3 is suitable for high-reliability applications, as it is built with a robust design and has undergone rigorous testing to ensure its performance and reliability.
  • Handle the SI3483DDV-T1-GE3 with care to avoid damage from electrostatic discharge (ESD), and store it in a dry, cool place, away from direct sunlight and moisture.

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SI3483DDV-T1-GE3 Overview

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