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SI3552DV-T1-E3 - Vishay

Description: MOSFET RECOMMENDED ALT 781-SI3552DV-GE3

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PCB Footprints
SI3552DV-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6 LEAD
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3D Models
SI3552DV-T1-E3 - Vishay  - 3D model - SOT23 (6-Pin) - TSOP 6 LEAD
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SI3552DV-T1-E3 Details

  • Manufacturer Part Number:

    SI3552DV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    28 ns

  • Turn-on Time-Max (ton):

    25 ns

SI3552DV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3552DV-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 1.5mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure the SI3552DV-T1-E3 operates within its recommended operating conditions, maintain a voltage supply between 2.7V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowable power dissipation for the SI3552DV-T1-E3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • Yes, the SI3552DV-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade devices and is suitable for use in harsh environments.
  • To prevent electrostatic discharge (ESD) damage, handle the SI3552DV-T1-E3 with ESD-protective equipment, such as wrist straps or mats. Avoid touching the device's pins or exposing it to static-prone environments.

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SI3552DV-T1-E3 Overview

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