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Si4103DY-T1-GE3 - Vishay

Description: P-Channel 30 V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

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Si4103DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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Si4103DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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Si4103DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4103DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.2

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    470 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5.2 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

Si4103DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4103DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI4103DY-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures, currents, or power dissipation. Refer to the datasheet for specific SOA guidelines.
  • A combination of thermal vias, thermal pads, and a heat sink can be used to effectively manage the thermal performance of the SI4103DY-T1-GE3. Ensure the thermal interface material (TIM) has a thermal conductivity of at least 1 W/m-K.
  • Yes, the SI4103DY-T1-GE3 is suitable for high-reliability applications due to its robust design, high-quality manufacturing process, and rigorous testing procedures. However, it is essential to follow proper design, assembly, and testing guidelines to ensure the device meets the required reliability standards.
  • To troubleshoot issues with the SI4103DY-T1-GE3, follow a systematic approach: 1) Verify the device is properly soldered and connected, 2) Check the power supply and voltage levels, 3) Verify the device is operating within its SOA, and 4) Consult the datasheet and application notes for guidance.

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Si4103DY-T1-GE3 Overview

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