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SI4156DY-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R

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SI4156DY-T1-GE3 - Vishay - PCB symbol
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SI4156DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - soic-8-ren2
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SI4156DY-T1-GE3 - Vishay - 3D model - Small Outline Packages - soic-8-ren2
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SI4156DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4156DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    6 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4156DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4156DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI4156DY-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures. Also, follow the recommended PCB layout and thermal management guidelines.
  • The maximum allowed power dissipation for the SI4156DY-T1-GE3 is 1.4 W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions.
  • Yes, the SI4156DY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard and is suitable for use in harsh environments.
  • The SI4156DY-T1-GE3 has a built-in thermal shutdown feature that activates when the junction temperature exceeds 150°C. To handle this feature, ensure proper thermal management, and design your system to detect and respond to thermal shutdown events.

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SI4156DY-T1-GE3 Overview

Use the download button to access the SI4156DY-T1-GE3 schematic symbol, PCB footprint, and 3D model.
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Small Signal Field-Effect Transistor, 24A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET