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SI4190ADY-T1-GE3 - Vishay

Description: Vishay SI4190ADY-T1-GE3 N-channel MOSFET Transistor, 18.4 A, 100 V, 8-Pin SOIC

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SI4190ADY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4190ADY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    18.4 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4190ADY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4190ADY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure reliability in high-temperature applications, ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and PCB design guidelines.
  • The maximum allowed voltage on the enable pin (EN) of the SI4190ADY-T1-GE3 is 6 V, which is the maximum rating for the logic input voltage.
  • Yes, the SI4190ADY-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • To calculate the power dissipation of the SI4190ADY-T1-GE3, use the formula: Pd = (VIN x IIN) + (VOUT x IOUT), where VIN is the input voltage, IIN is the input current, VOUT is the output voltage, and IOUT is the output current.

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SI4190ADY-T1-GE3 Overview

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