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SI4378DY-T1-E3 - Vishay

Description: MOSFET N-CH 20V 19A 8SO

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SI4378DY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4378DY-T1-E3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4378DY-T1-E3 Details

  • Manufacturer Part Number:

    SI4378DY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4378DY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4378DY-T1-E3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern can be found in the Vishay Intertechnologies' application note AN-10365.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device, and consider using a thermal pad or heat sink to dissipate heat. Additionally, ensure that the PCB design and layout minimize thermal resistance and provide adequate clearance around the device.
  • While the SI4378DY-T1-E3 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 MHz. However, the device's performance may degrade at higher frequencies, and additional filtering or impedance matching may be required to ensure signal integrity.
  • The SI4378DY-T1-E3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • The recommended storage condition for the SI4378DY-T1-E3 is in a dry, cool place with a temperature range of -40°C to 125°C and relative humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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SI4378DY-T1-E3 Overview

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Part Image SI4378DY-E3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 19A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET