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SI4386DY-T1-GE3 - Vishay

Description: VISHAY - SI4386DY-T1-GE3 - N CHANNEL MOSFET, 30V, 16A, SOIC, FULL REEL

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PCB Footprints
SI4386DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW): 8-LEAD
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3D Models
SI4386DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW): 8-LEAD
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SI4386DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4386DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4386DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4386DY-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern can be found in the Vishay Intertechnologies' application note AN-10365.
  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and avoiding thermal hotspots. Additionally, the device should be operated within its specified temperature range (-40°C to 150°C).
  • The maximum allowed voltage on the enable pin (EN) of the SI4386DY-T1-GE3 is 6V. Exceeding this voltage may damage the device.
  • Yes, the SI4386DY-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rating.
  • To prevent electrostatic discharge (ESD) damage, it's essential to handle the SI4386DY-T1-GE3 with proper ESD protection measures, such as using an ESD wrist strap, ESD mat, or ESD-safe packaging. The device has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).

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SI4386DY-T1-GE3 Overview

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Part Image SI4386DY-T1-E3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET