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SI4403CDY-T1-GE3 - Vishay

Description: P-Channel 1.8 V (G-S) MOSFET

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SI4403CDY-T1-GE3 - Vishay - PCB symbol
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SI4403CDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4403CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4403CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    13.4 A

  • Drain-source On Resistance-Max:

    0.0155 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4403CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4403CDY-T1-GE3 is a standard QFN16 package with a 3x3 mm body size and 0.5 mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliable operation in high-temperature environments, ensure proper thermal management by providing adequate heat sinking and airflow. The device is rated for operation up to 125°C, but derating may be necessary for extended lifetimes.
  • The SI4403CDY-T1-GE3 has built-in ESD protection, but handling precautions are still necessary. Follow standard ESD handling procedures, such as using wrist straps, anti-static bags, and grounded workstations, to prevent damage.
  • While the SI4403CDY-T1-GE3 is a isolated MOSFET driver, it can be used in non-isolated power supply designs with proper circuit design and layout considerations. However, ensure that the device is not subjected to high common-mode voltages.
  • The maximum allowable voltage on the VCC pin of the SI4403CDY-T1-GE3 is 15 V. Exceeding this voltage may damage the device.

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SI4403CDY-T1-GE3 Overview

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