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SI4459ADY-T1-GE3 - Vishay

Description: Trans MOSFET P-CH 30V 29A 8-Pin SOIC N T/R

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SI4459ADY-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI4459ADY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead soic
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3D Models
SI4459ADY-T1-GE3 - Vishay - 3D model - Small Outline Packages - 8 lead soic
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SI4459ADY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4459ADY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    7.8 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4459ADY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4459ADY-T1-GE3 can be found in the Vishay Intertechnologies' application note AN81142, which provides a detailed layout and land pattern design guide.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowable voltage stress on the SI4459ADY-T1-GE3 is 80V, as specified in the datasheet. Exceeding this voltage may result in device damage or failure.
  • Yes, the SI4459ADY-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz. However, it is recommended to consult with a Vishay Intertechnologies' application engineer to ensure the device meets the specific requirements of your application.
  • The typical junction-to-case thermal resistance of the SI4459ADY-T1-GE3 is 1.5°C/W, as specified in the datasheet.

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SI4459ADY-T1-GE3 Overview

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