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SI4485DY-T1-GE3 - Vishay

Description: MOSFET 30V 6.0A 5.0W 42mohm @ 10V

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SI4485DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SI4485DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SO8
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SI4485DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4485DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4485DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4485DY-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN81193.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note AN81193. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
  • The SI4485DY-T1-GE3 has an operating temperature range of -40°C to 150°C. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • Yes, the SI4485DY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q100 and is PPAP capable. However, it's essential to consult with Vishay Intertechnologies' application engineers to ensure the device meets the specific requirements of your application.
  • To prevent electrostatic discharge (ESD) damage, handle the SI4485DY-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in a conductive bag or tube to prevent static buildup.

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SI4485DY-T1-GE3 Overview

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Part Image SI4485DY-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET