Part Image

SI4532ADY-T1-E3 - Vishay

Description: SI4532ADY-T1-E3, Dual N/P-channel MOSFET Transistor 30V, 8-Pin SOIC

Download SI4532ADY-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI4532ADY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
click to zoom
3D Models
SI4532ADY-T1-E3 - Vishay  - 3D model - Small Outline Packages - SO8
click to zoom

SI4532ADY-T1-E3 Details

  • Manufacturer Part Number:

    SI4532ADY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI4532ADY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4532ADY-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the datasheet. Use a solder with a melting point between 217°C to 220°C, and avoid excessive soldering temperatures or times.
  • The SI4532ADY-T1-E3 has an operating temperature range of -40°C to 150°C. However, the device's performance and reliability may degrade if operated outside the recommended temperature range of -20°C to 125°C.
  • Yes, the SI4532ADY-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade devices and is suitable for use in harsh environments.
  • To prevent electrostatic discharge (ESD) damage, handle the SI4532ADY-T1-E3 with ESD-protective equipment, such as wrist straps, mats, or bags. Follow proper ESD handling procedures to prevent damage to the device.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI4532ADY-T1-E3 Overview

Use the download button to access the SI4532ADY-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI453, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI4532ADY-T1-E3

Showing 0 results

SI4532ADY-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI9939DY Vishay Siliconix

Transistor

Part Image SI4532ADY-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image SI4532ADY-T1 Vishay Siliconix

Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4532ADY-T1 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET