SI4532CDY-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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Part Number SI4532CDY-T1-GE3
Manufacturer Vishay
Pin Count 8
Part Category Transistor
Package Category SOT23 (8-Pin)
Footprint Name SOT23 (8-Pin) - SOIC (NARROW): 8-LEAD
Released Date Oct 10, 2017
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI4532CDY-T1-GE3 Details

Manufacturer Part Number:
SI4532CDY-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Country Of Origin:
Germany, Israel
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
7
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
6 A
Drain-source On Resistance-Max:
0.047 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
MS-012AA
JESD-30 Code:
R-PDSO-G8
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs):
2.78 W
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SI4532CDY-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI4532CDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
To ensure the SI4532CDY-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 1.8V to 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range of 100 kHz to 50 MHz.
The maximum allowable power dissipation for the SI4532CDY-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
To prevent electrostatic discharge (ESD) damage, handle the SI4532CDY-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed internal components.
Store the SI4532CDY-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.

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SI4532CDY-T1-GE3 Overview

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SI4532CDY-T1-GE3 - Vishay

SI4532CDY-T1-GE3 Details

SI4532CDY-T1-GE3 Frequently Asked Questions (FAQs)

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SI4532CDY-T1-GE3 Overview

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