Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SI4816BDY-T1-GE3 - Vishay

Description: MOSFET 30V Vds 20V Vgs SO-8

Download SI4816BDY-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SI4816BDY-T1-GE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SI4816BDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
click to zoom
3D Models
SI4816BDY-T1-GE3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
click to zoom

SI4816BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4816BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC-8

  • Country Of Origin:

    Germany, USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.8 A

  • Drain-source On Resistance-Max:

    0.0185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    55 ns

  • Turn-on Time-Max (ton):

    32 ns

SI4816BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4816BDY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI4816BDY-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures, currents, or power dissipation. Refer to the datasheet for specific SOA guidelines.
  • A combination of thermal vias, thermal pads, and a heat sink can be used to effectively manage the thermal performance of the SI4816BDY-T1-GE3. Ensure the thermal interface material (TIM) is compatible with the device and PCB materials.
  • Implement ESD protection measures during handling, storage, and assembly of the SI4816BDY-T1-GE3. Use ESD-safe materials, wrist straps, and mats, and follow proper grounding procedures to prevent electrostatic discharge damage.
  • The SI4816BDY-T1-GE3 meets industry-standard reliability and quality standards, including AEC-Q101 and ISO/TS 16949. Vishay Intertechnologies also provides a 5-year warranty for the device.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI4816BDY-T1-GE3 Overview

Use the download button to access the SI4816BDY-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI481, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI4816BDY-T1-GE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SI4816BDY-T1-GE3 Alternates

Showing results

Image Part Number Model
Part Image SI4816BDY-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 5.8A I(D), 30V, 0.0185ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image SI4816BDY-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image SI4816BDY-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET