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SI4830CDY-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 30V 7.5An Vishay SI4830CDY-T1-GE3 Dual N-channel MOSFET Transistor, 7.5 A, 30 V, 8-Pin SOIC

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SI4830CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4830CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.9 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4830CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4830CDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note AN10343.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure that the device is operated within the recommended operating temperature range of -55°C to 150°C, and that the maximum junction temperature (Tj) is not exceeded.
  • The recommended soldering profile for the SI4830CDY-T1-GE3 is a peak temperature of 260°C for 10 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. It is also recommended to follow the IPC/JEDEC J-STD-020 standard for soldering.
  • To handle the SI4830CDY-T1-GE3 for ESD protection, it is recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. The device has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).
  • The recommended storage condition for the SI4830CDY-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture. The devices should be stored in their original packaging or in a similar anti-static packaging to prevent damage from ESD.

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SI4830CDY-T1-GE3 Overview

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Part Image SI4830CDY-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET