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SI4890DY-T1-E3 - Vishay

Description: MOSFET 30V 11A 2.5W

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SI4890DY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SI4890DY-T1-E3 - Vishay  - 3D model - Small Outline Packages - SO8
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SI4890DY-T1-E3 Details

  • Manufacturer Part Number:

    SI4890DY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4890DY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SI4890DY-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a maximum pad size of 1.2mm x 1.2mm, with a 0.5mm spacing between pads.
  • To ensure reliability in high-temperature applications, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and avoiding excessive power dissipation. Additionally, the device should be operated within its specified temperature range of -55°C to 150°C.
  • The maximum allowed voltage on the enable pin (EN) of the SI4890DY-T1-E3 is 6V, which is the maximum rating for the logic input voltage. Exceeding this voltage may cause damage to the device.
  • Yes, the SI4890DY-T1-E3 is suitable for use in switching regulator applications due to its high-frequency capability and low RDS(on) characteristics. However, it is essential to ensure that the device is operated within its specified power dissipation limits and that proper thermal management is implemented.
  • To calculate the power dissipation of the SI4890DY-T1-E3, you need to consider the voltage drop across the device, the current flowing through it, and the operating frequency. The power dissipation can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs) + (f x Ciss x Vds^2), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, f is the operating frequency, and Ciss is the input capacitance.

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SI4890DY-T1-E3 Overview

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Part Image SI4890DY-E3 Vishay Siliconix

Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET