Part Image

SI4896DY-T1-E3 - Vishay

Description: MOSFET 80V Vds 20V Vgs SO-8

Download SI4896DY-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI4896DY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
click to zoom
3D Models
SI4896DY-T1-E3 - Vishay  - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
click to zoom

SI4896DY-T1-E3 Details

  • Manufacturer Part Number:

    SI4896DY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    6.7 A

  • Drain-source On Resistance-Max:

    0.0165 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.56 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    105 ns

  • Turn-on Time-Max (ton):

    42 ns

SI4896DY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4896DY-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI4896DY-T1-E3 operates within its recommended operating conditions, ensure the input voltage is between 1.8V and 5.5V, and the junction temperature is within the range of -40°C to 125°C. Also, follow the recommended PCB layout guidelines to minimize thermal resistance and ensure proper heat dissipation.
  • The maximum allowable power dissipation for the SI4896DY-T1-E3 is 1.4W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions. It's essential to perform thermal analysis and ensure the device operates within its recommended power dissipation limits.
  • Yes, the SI4896DY-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade devices and is suitable for use in harsh environments. However, it's essential to consult with Vishay Intertechnologies or an authorized distributor for specific qualification and certification details.
  • To prevent electrostatic discharge (ESD) damage, handle the SI4896DY-T1-E3 with ESD-protective equipment, such as wrist straps, mats, or bags. Ensure the workspace is ESD-safe, and follow proper handling and storage procedures to prevent damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI4896DY-T1-E3 Overview

Use the download button to access the SI4896DY-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI489, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI4896DY-T1-E3

Showing 0 results

SI4896DY-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI4896DY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 6.7A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA

Part Image SI4896DY-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 6.7A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA

Part Image SI4896DY-T1 Vishay Intertechnologies

Power Field-Effect Transistor, 6.7A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4896DY Vishay Siliconix

Transistor