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SI4904DY-T1-GE3 - Vishay

Description: Mosfet Array 40V 8A 3.25W Surface Mount 8-SOIC

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SI4904DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4904DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.25 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI4904DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4904DY-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI4904DY-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 2.7V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowable power dissipation for the SI4904DY-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • To prevent electrostatic discharge (ESD) damage, handle the SI4904DY-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Also, avoid touching the device's pins or handling it in environments with high electrostatic potential.
  • Store the SI4904DY-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures during storage.

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SI4904DY-T1-GE3 Overview

Use the download button to access the SI4904DY-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image SI4904DY-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image SI4904DY-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA