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SI4909DY-T1-GE3 - Vishay

Description: Trans MOSFET P-CH 40V 6.4An Vishay SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor, 6.5 A, -40 V, 8-Pin SOIC

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SI4909DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead soic
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SI4909DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - 8 lead soic
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SI4909DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4909DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4909DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4909DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI4909DY-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures, currents, or power dissipation. Refer to the datasheet for specific SOA guidelines.
  • A combination of thermal vias, thermal pads, and a heat sink can be used to effectively manage the thermal performance of the SI4909DY-T1-GE3. Ensure the thermal interface material (TIM) has a thermal conductivity of at least 1 W/m-K.
  • Yes, the SI4909DY-T1-GE3 is suitable for high-reliability applications due to its robust design, high-temperature rating, and compliance with industry standards such as AEC-Q100 and IATF 16949.
  • To troubleshoot issues with the SI4909DY-T1-GE3, start by verifying the device is properly soldered, and the PCB layout meets the recommended footprint. Then, check for voltage and current ratings, and ensure the device is operating within its SOA. If issues persist, consult the datasheet or contact Vishay Intertechnologies' technical support.

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SI4909DY-T1-GE3 Overview

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