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SI4943CDY-T1-GE3 - Vishay

Description: MOSFET -20V Vds 20V Vgs SO-8

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SI4943CDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SI4943CDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SO8
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SI4943CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4943CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    6 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0192 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    385 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    PURE MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    67 ns

  • Turn-on Time-Max (ton):

    182 ns

SI4943CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4943CDY-T1-GE3 is a SOIC-8 package with a minimum pad size of 2.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure the SI4943CDY-T1-GE3 operates within its recommended operating conditions, maintain a junction temperature (TJ) between -40°C to 150°C, and an ambient temperature (TA) between -40°C to 125°C. Also, ensure the input voltage (VIN) is within the recommended range of 4.5V to 18V.
  • The maximum allowed power dissipation for the SI4943CDY-T1-GE3 is 1.4W at an ambient temperature of 70°C, and 2.1W at an ambient temperature of 25°C.
  • To handle ESD protection for the SI4943CDY-T1-GE3, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag or container.
  • The recommended storage temperature range for the SI4943CDY-T1-GE3 is -40°C to 125°C.

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SI4943CDY-T1-GE3 Overview

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Part Image SI4943CDY-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 8A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET