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SI4953ADY-T1-E3 - Vishay

Description: SI4953ADY-T1-E3, Dual P-channel MOSFET Transistor 3.7A 30V, 8-Pin SOIC

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SI4953ADY-T1-E3 Details

  • Manufacturer Part Number:

    SI4953ADY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI4953ADY-T1-E3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI4953ADY-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure the device is operated within its specified temperature range (up to 150°C). Implement proper thermal management, such as heat sinks or thermal interfaces, and consider derating the device's power handling at elevated temperatures.
  • The SI4953ADY-T1-E3 has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, handle the device by the body or pins, and avoid touching the die or wire bonds. Store the device in an anti-static bag or container.
  • The SI4953ADY-T1-E3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade products. For high-reliability applications, consider using a device with a higher qualification level, such as the JAN or ESCC certified versions.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30 seconds maximum. For rework, use a low-temperature soldering iron (below 350°C) and avoid applying excessive force or heat to the device.

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SI4953ADY-T1-E3 Overview

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Part Image SI4953ADY Vishay Siliconix

Power Field-Effect Transistor, 3.7A I(D), 30V, 0.053ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET