SI5403DC-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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Part Number SI5403DC-T1-GE3
Manufacturer Vishay
Pin Count 8
Part Category MOSFET (P-Channel)
Package Category SO Transistor Flat Lead
Footprint Name SO Transistor Flat Lead - 1206-8 pin i
Released Date Nov 11, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI5403DC-T1-GE3 Details

Manufacturer Part Number:
SI5403DC-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
USA
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
5
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
6 A
Drain-source On Resistance-Max:
0.03 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
185 pF
JESD-30 Code:
R-PDSO-F8
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
6.3 W
Pulsed Drain Current-Max (IDM):
20 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
FLAT
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
74 ns
Turn-on Time-Max (ton):
34 ns

SI5403DC-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI5403DC-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
To ensure the SI5403DC-T1-GE3 operates within its recommended operating conditions, ensure the input voltage is between 2.7V and 5.5V, and the junction temperature is within the range of -40°C to 125°C. Also, ensure the device is not exposed to excessive moisture or humidity.
The maximum allowable power dissipation for the SI5403DC-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, this value may decrease as the ambient temperature increases.
Yes, the SI5403DC-T1-GE3 is suitable for high-reliability applications. It is built with a robust design and undergoes rigorous testing to ensure its performance and reliability. However, it is essential to follow proper design and manufacturing guidelines to ensure the device operates within its recommended specifications.
To prevent electrostatic discharge (ESD) damage, handle the SI5403DC-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposing it to static electricity.

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SI5403DC-T1-GE3 - Vishay

SI5403DC-T1-GE3 Details

SI5403DC-T1-GE3 Frequently Asked Questions (FAQs)

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