SI5513CDC-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SI5513CDC-T1-GE3 - Vishay PCB footprint - Other - Other - SI5513CDC-T1-GE3-1

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Datasheet Download Datasheet
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Part Number SI5513CDC-T1-GE3
Manufacturer Vishay
Pin Count 8
Part Category MOSFET Pair (N/P-Channel)
Package Category Other
Footprint Name Other - SI5513CDC-T1-GE3-1
Released Date Feb 21, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI5513CDC-T1-GE3 Details

Manufacturer Part Number:
SI5513CDC-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
6.95
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
20 V
Drain Current-Max (ID):
4 A
Drain-source On Resistance-Max:
0.055 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-C8
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs):
3.1 W
Surface Mount:
YES
Terminal Finish:
MATTE TIN
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SI5513CDC-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI5513CDC-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
To ensure the SI5513CDC-T1-GE3 operates within its recommended operating conditions, maintain a supply voltage between 1.8V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
The maximum allowable power dissipation for the SI5513CDC-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
Yes, the SI5513CDC-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is suitable for use in harsh environments.
To prevent electrostatic discharge (ESD) damage, handle the SI5513CDC-T1-GE3 with ESD-protective equipment, such as wrist straps or mats. Avoid touching the device's pins or exposing it to static-prone environments.

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SI5513CDC-T1-GE3 Overview

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