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SI5515CDC-T1-E3 - Vishay

Description: 1-MOSFET -20V Vds 8V Vgs 1206-8 ChipFET

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SI5515CDC-T1-E3 - Vishay PCB footprint - Other - Other - SI5515CDC-T1-E3-4
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SI5515CDC-T1-E3 Details

  • Manufacturer Part Number:

    SI5515CDC-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5515CDC-T1-E3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI5515CDC-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation.
  • To ensure reliable operation in high-temperature environments, ensure that the device is properly heatsinked, and the maximum junction temperature (Tj) is not exceeded. Also, consider derating the device's power handling capabilities at high temperatures.
  • The SI5515CDC-T1-E3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage. A minimum of 2 kV human body model (HBM) and 200 V machine model (MM) ESD protection is recommended.
  • While the SI5515CDC-T1-E3 is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. Consult with Vishay Intertechnologies or a qualified reliability engineer to determine the device's suitability for such applications.
  • The recommended soldering conditions for the SI5515CDC-T1-E3 are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering iron temperature of 350°C. Follow the IPC-J-STD-020 standard for soldering and assembly.

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SI5515CDC-T1-E3 Overview

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