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SI6913DQ-T1-GE3 - Vishay

Description: Mosfet Array 12V 4.9A 830mW Surface Mount 8-TSSOP

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SI6913DQ-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSSOP-8
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SI6913DQ-T1-GE3 - Vishay  - 3D model - Small Outline Packages - TSSOP-8
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SI6913DQ-T1-GE3 Details

  • Manufacturer Part Number:

    SI6913DQ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    4.9 A

  • Drain-source On Resistance-Max:

    0.021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.14 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI6913DQ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI6913DQ-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pins (VIN and VOUT) to a stable voltage source, and ensure the output pin (VOUT) is decoupled with a 1uF ceramic capacitor. Additionally, maintain a minimum input voltage of 2.5V and a maximum input voltage of 5.5V.
  • The SI6913DQ-T1-GE3 has an operating temperature range of -40°C to 125°C. However, it's recommended to operate the device within a temperature range of -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI6913DQ-T1-GE3 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure high reliability and low defect rates. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To prevent electrostatic discharge (ESD) damage, handle the SI6913DQ-T1-GE3 with ESD-protective equipment, such as wrist straps or mats. Ensure the device is stored in an ESD-protective package, and avoid touching the pins or leads during handling.

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SI6913DQ-T1-GE3 Overview

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Part Image SI6913DQ-T1-E3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 4.9A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET