Part Image

SI6926ADQ-T1-E3 - Vishay

Description: MOSFET 20V Vds 8V Vgs TSSOP-8

Download SI6926ADQ-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI6926ADQ-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSSOP-8
click to zoom
3D Models
SI6926ADQ-T1-E3 - Vishay  - 3D model - Small Outline Packages - TSSOP-8
click to zoom

SI6926ADQ-T1-E3 Details

  • Manufacturer Part Number:

    SI6926ADQ-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TSSOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.1 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI6926ADQ-T1-E3 Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a thermal relief pattern under the device. A minimum of 2 oz copper thickness is recommended. Additionally, ensure that the PCB has adequate thermal vias to dissipate heat efficiently.
  • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C. Apply a small amount of solder paste to the pads, and use a reflow oven or a hot air gun to solder the device. Avoid using excessive solder or flux, as it can compromise the device's reliability.
  • Store the SI6926ADQ-T1-E3 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C. Avoid exposing the device to extreme temperatures, humidity, or physical stress.
  • Yes, the SI6926ADQ-T1-E3 is suitable for high-reliability applications. It is manufactured using a robust process, and Vishay Intertechnologies provides a high level of quality control. However, it is essential to follow proper design, manufacturing, and testing procedures to ensure the device meets the required reliability standards.
  • Handle the device by the body or the pins, avoiding touching the die or wire bonds. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage. During testing, ensure that the device is properly secured to prevent mechanical stress or damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI6926ADQ-T1-E3 Overview

Use the download button to access the SI6926ADQ-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI692, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI6926ADQ-T1-E3

Showing 0 results

SI6926ADQ-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI6926ADQ-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET