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SI7106DN-T1-E3 - Vishay

Description: Vishay SI7106DN-T1-E3 N-channel MOSFET Transistor, 12.5 A, 20 V, 8-Pin PowerPAK 1212

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SI7106DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7106DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    12.5 A

  • Drain-source On Resistance-Max:

    0.0062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7106DN-T1-E3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7106DN-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the datasheet's thermal derating curve.
  • The SI7106DN-T1-E3 is an ESD-sensitive device. Handle the device by the body or pins, avoid touching the pins, and use an ESD wrist strap or mat. Store the device in an anti-static bag or wrap it in anti-static material. Follow standard ESD handling procedures to prevent damage.
  • The SI7106DN-T1-E3 is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. Consult with Vishay Intertechnologies or a qualified engineer to determine the device's suitability for your specific application.
  • Follow the recommended soldering and rework conditions outlined in the datasheet or Vishay Intertechnologies' application notes. In general, use a soldering iron with a temperature range of 250°C to 260°C, and limit the soldering time to 3-5 seconds. For rework, use a hot air rework station with a temperature range of 180°C to 200°C.

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SI7106DN-T1-E3 Overview

Use the download button to access the SI7106DN-T1-E3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI710, or try a keyword search, such as Power Field-Effect Transistors

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Part Image SI7106DN-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET