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SI7114DN-T1-E3 - Vishay

Description: VISHAY - SI7114DN-T1-E3 - MOSFET, N CH, 30V, 11.7A, POWERPAK 1212

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SI7114DN-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI7114DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8-SINGLE
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3D Models
SI7114DN-T1-E3 - Vishay - 3D model - Other - PowerPAK-1212-8-SINGLE
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SI7114DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7114DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    42 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1 V

  • Drain Current-Max (ID):

    11.7 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7114DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7114DN-T1-E3 is a 5x5 mm QFN package with a 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
  • To ensure reliability in high-temperature applications, it is recommended to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the PCB.
  • The maximum allowed voltage on the gate pin of the SI7114DN-T1-E3 is 12 V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the SI7114DN-T1-E3 is suitable for high-frequency switching applications up to 1 MHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
  • To protect the SI7114DN-T1-E3 from ESD, follow proper handling and storage procedures, such as using ESD-safe materials and equipment, and ensuring that the device is properly grounded during handling and assembly.

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SI7114DN-T1-E3 Overview

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