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SI7121ADN-T1-GE3 - Vishay

Description: MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

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SI7121ADN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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SI7121ADN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK 1212-8 Single
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SI7121ADN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7121ADN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    9.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7121ADN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7121ADN-T1-GE3 should include a solid ground plane, a thermal relief pattern under the device, and a minimal number of thermal vias to reduce thermal resistance. A 2-layer or 4-layer board with a thermal pad on the bottom layer is recommended.
  • To ensure reliable operation at high temperatures, ensure that the device is operated within its specified temperature range, and that the PCB is designed to minimize thermal resistance. Also, consider using a heat sink or thermal interface material to improve heat dissipation.
  • The recommended soldering profile for the SI7121ADN-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. A soldering iron with a temperature range of 350-400°F (175-200°C) is recommended.
  • To handle ESD protection for the SI7121ADN-T1-GE3, ensure that the device is handled in an ESD-protected environment, and that all personnel handling the device wear ESD-protective wrist straps or clothing. Also, consider using ESD-protective packaging and storage materials.
  • The recommended storage and handling procedure for the SI7121ADN-T1-GE3 is to store the device in its original packaging, in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the device by the body, not the leads.

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SI7121ADN-T1-GE3 Overview

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