FDS6670AS Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDS6670AS onsemi	1	13.5A, 30V RDS(on) = 9.0mΩ @ VGS = 10V RDS(on) = 11.5mΩ @ VGS = 4.5V ; High power and current handling capability ; Low gate charge (27nC typical) ; RoHS Compliant ; Includes SyncFET Schottky body diode ; High performance trench technology for extremely lowRDS(ON) and fast switching	Small Outline Packages	FDS6670AS	3D model available Symbol and footprint available 3	1 Download Model
	FDS6670AS Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 13.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS6670AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS6670AS62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS6670AS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS6670AS_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 13.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS6670AS_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDS6670AS-G Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 13.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDS6670AS-G	3D model not available Symbol and footprint not available 0	0 Build or Request

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